A Novel Design and Optimization Approach for Low Noise Amplifiers (LNA) Based on MOST Scattering Parameters and the gm/ID Ratio

DOI
10.3390/electronics9050785
Juan L. Castagnola; Fortunato C. Dualibe; Agustín M. Laprovitta; Hugo García-Vázquez
Bibliographical reference

Electronics 2020, 9(5), 785

Advertised on:
5
2020
Number of authors
4
IAC number of authors
1
Refereed citations
0
Description
This work presents a new design methodology for radio frequency (RF) integrated circuits based on a unified analysis of the scattering parameters of the circuit and the gm/ID ratio of the involved transistors. Since the scattering parameters of the circuits are parameterized by means of the physical characteristics of transistors, designers can optimize transistor size and biasing to comply with the circuit specifications given in terms of S-parameters. A complete design of a cascode low noise amplifier (LNA) in MOS 65 nm technology is taken as a case study in order to validate the approach. In addition, this methodology permits the identification of the best trade-off between the minimum noise figure and the maximum gain for the LNA in a very simple way.
Type
Refereed

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