SiNx-induced intermixing in AlInGaAs/InP quantum well through interdiffusion of group III atoms
We analyze the composition profiles within intermixed and non-intermixed AlInGaAs-based multiple quantum wells structures by secondary ion mass spectrometry and observe that the band gap blue shift is mainly attributed to the interdiffusion of In and Ga atoms between the quantum wells and the barriers. Based on these results, several AlInGaAs-based
Lee, Ko-Hsin et al.
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2012