Surfactant role of (TM)Sb in MOVPE growth of metamorphic InGaAs graded buffers

Gocalinska, A.; Manganaro, M.; Pelucchi, E.
Referencia bibliográfica

AIP Conference Proceedings, Volume 1566, Issue 1, p.17-18

Fecha de publicación:
12
2013
Número de autores
3
Número de autores del IAC
0
Número de citas
0
Número de citas referidas
0
Descripción
We present a virtual substrate for high quality InAs epitaxial layer, obtained via metalorganic vapor-phase epitaxy growth of Sb-assisted InxGa1-xAs metamorphic buffers, following a convex compositional continuous gradient of the In content from x = 53 % to 100 %. The use of Trimethylantimony (or its decomposition products) as a surfactant was found to be a suitable way to control defect formation during the relaxation process. Reliably uniform growth with good morphology was obtained on crystals with misorientation toward [111]B direction.